Based on the 3rd generation of pSi semiconductors. Since their introduction in 1992, the high doped p-type silicon detector chips, specifically designed for radiation therapy applications, have been the natural choice for measurements where high spatial resolution is required. The accuracy and lifetime of the diode detectors is unsurpassed in the field of radiation therapy today.
Description
| Type | Application | Color |
RFD 3G-pSi | Reference detector | black |
Technical specs
RFD 3G-pSi diode reference detector
- Enclosure material: ABS and epoxy
- Measurement point: Indicated by a white dot on the detector
- Chip size (mm): 2.1 ˣ 2.1 ˣ 0.4
- Active detector diameter (mm): 1.6
- Active detector thickness (mm): 0.08
Operational characteristics for RFD 3G-pS
- Typical sensitivity: 100 nC/Gy
- Sensitivity decrease: Co-60 < 1%/250 Gy ; 6 MV < 1%/250 Gy ; 15 MV < 1%/250 Gy
- Dose rate linearity, conventional beams: < 1% in the range 0.1 - 0.6 mGy/pulse
- Dose rate linearity, FFF beams: 3% at 1.0 mGy/pulse, 7% at 2.3 mGy/pulse
- Sensitivity change with temperature: 0.25%/oC (typical)
- Operating Voltage: 0 V
- Waterproof: Yes
- Polarity: Positive current on center connection
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